IRF7416TRPBF

MOSFET MOSFT PCh -30V -10A 20mOhm 61nC

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IRF7416TRPBF Picture
SeekIC No. : 00150281 Detail

IRF7416TRPBF: MOSFET MOSFT PCh -30V -10A 20mOhm 61nC

floor Price/Ceiling Price

US $ .35~.88 / Piece | Get Latest Price
Part Number:
IRF7416TRPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.88
  • $.54
  • $.37
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 10 A
Resistance Drain-Source RDS (on) : 35 mOhms Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Configuration :
Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 35 mOhms
Continuous Drain Current : - 10 A


Description

The IRF7416TRPBF Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The feature of the IRF7416TRPBF are:(1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.

The absolute maximum ratings of the IRF7416TRPBF can be summarized as:(1)ID @ TA = 25°C Continuous Drain Current, VGS @ -10V: -10A; (2)ID @ TA = 70°C Continuous Drain Current, VGS @ - 10V: -7.1A; (3)IDM Pulsed Drain Current: -45A; (4)PD @TA = 25°C Power Dissipation: 2.5W; (5)Linear Derating Factor: 0.02 mW/°C; (6)VGS Gate-to-Source Voltage : ± 20 V; (7)EAS Single Pulse Avalanche Energy:370mJ; (8)dv/dt Peak Diode Recovery dv/dt : -5.0  V/ns; (9)TJ, TSTG Junction and Storage Temperature Range: -55  to + 150°C.

If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .




Parameters:

Technical/Catalog InformationIRF7416TRPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs20 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs92nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7416TRPBF
IRF7416TRPBF
IRF7416TRPBFTR ND
IRF7416TRPBFTRND
IRF7416TRPBFTR



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