Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Package / Case
: SOIC-8
Drain-Source Breakdown Voltage
: - 12 V
Gate-Source Breakdown Voltage
: 8 V
Resistance Drain-Source RDS (on)
: 14 mOhms
Continuous Drain Current
: - 11.5 A
Features: ·Ultra Low On-Resistance
·P-Channel MOSFET
·Surface Mount
·Available in Tape & Reel
·Lead-FreePinout
Specifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
-11.5 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ -4.5V |
-9.2 |
| IDM |
Pulsed Drain Current |
-46 |
| PD @TA = 25 |
Power Dissipation |
2.5 |
W |
| PD @TA = 70 |
Power Dissipation |
1.6 |
| |
Linear Derating Factor |
20 |
mW/ |
| VGS |
Gate-to-Source Voltage |
±8 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionThese P-Channel HEXFETPower MOSFETs from International Rectifier IRF7420PbF utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 IRF7420PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.
Parameters: | Technical/Catalog Information | IRF7420PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 11.5A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 11.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 3529pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 38nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7420PBF
IRF7420PBF
|
IRF7420PBF Data Sheet
