Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Package / Case
: SOIC-8
Drain-Source Breakdown Voltage
: - 12 V
Gate-Source Breakdown Voltage
: 8 V
Resistance Drain-Source RDS (on)
: 24 mOhms
Continuous Drain Current
: - 8.9 A
Features: · Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
-12 |
V |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
-8.9 |
A |
| ID @ TA = 70°C |
Continuous Drain Current, VGS @ -4.5V |
-7.1 |
| IDM |
Pulsed Drain Current |
-36 |
| PD @TA = 25°C |
Maximum Power Dissipation |
2.5 |
W |
| PD @TA = 70°C |
Maximum Power Dissipation |
1.6 |
W |
| |
Linear Derating Factor |
0.02 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±8 |
V |
| TJ , TSTG |
Junction and Storage Temperature Range |
-55 to +150 |
°C |
DescriptionThese P-Channel MOSFETs IRF7433PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 IRF7433PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7433PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 8.9A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 8.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1877pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7433PBF
IRF7433PBF
|
IRF7433PBF Data Sheet
