IRF7450PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 200 V
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 170 m Ohms


Application

· High frequency DC-DC converters
· Lead-Free


Specifications

	Parameter	Maximum	Units
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	2.5	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	2.0
IDM	Pulsed Drain Current	20
PD @TA = 25	Power Dissipation	2.5	W
	Linear Derating Factor	0.02	mW/
VGS	Linear Derating Factor	±30	V
dv/dt	Peak Diode Recovery dv/dt	11	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Parameters:

Technical/Catalog Information	IRF7450PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	170 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	940pF @ 25V
Power - Max	2.5W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7450PBF IRF7450PBF