IRF7456PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 7.5 mOhms


Features:

· Ultra-Low RDS(on) at 4.5V VGS
· Low Charge and Low Gate Impedance to Reduce Switching Losses
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency DC-DC Converters with Synchronous Rectification
· Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±12	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	16	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	13
IDM	Pulsed Drain Current	130
PD @TA = 25	Power Dissipation (PCB Mount)	2.5	W
PD @TA = 25	Power Dissipation (PCB Mount)	1.6	W
	Linear Derating Factor	0.02	mW/
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7456PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	3640pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	62nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7456PBF IRF7456PBF