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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 15 A | ||
| Resistance Drain-Source RDS (on) : | 10.5 mOhms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |
|
Symbol |
Parameter |
Max. |
Units |
| VDS | Drain-Source Voltage |
20 |
V |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
15 |
A |
| ID @ TA = 70 | Continuous Drain Current, VGS @ 10V |
12 | |
| IDM | Pulsed Drain Current |
120 | |
| PD @TA = 25 | Maximum Power Dissipation |
2.5 |
W |
| PD @TA = 70 | Maximum Power Dissipation |
1.6 |
W |
| Linear Derating Factor |
0.02 |
W/ | |
| TJ , TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
| Technical/Catalog Information | IRF7457PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 3100pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 42nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7457PBF IRF7457PBF |