IRF7458PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 8 m Ohms


Features:

· Ultra-Low Gate Impedance
· Very Low RDS(on)
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power
· Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	30 V	V
VGS	Gate-to-Source Voltage	± 30 V	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	14	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	11
IDM	Pulsed Drain Current	110
PD @ TA = 25	Power Dissipation (PCB Mount)	2.5	W
PD @ TA = 70	Power Dissipation (PCB Mount)	1.6	W
	Linear Derating Factor	0.02	mW/
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7458PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14A, 16V
Input Capacitance (Ciss) @ Vds	2410pF @ 15V
Power - Max	2.5W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	59nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7458PBF IRF7458PBF