IRF7460PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 14 mOhms


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power
· Lead-Free


Specifications

Parameter	Symbol	Rating	Unit
Continuous Drain Current, VGS @ -10V,Ta = 25	ID	12	A
Continuous Drain Current, VGS @ -10V,Ta = 70	ID	10	A
Pulsed Drain Current*1	IDM	100	A
Power Dissipation Ta = 25	PD	2.5	W
Power Dissipation Ta = 70	PD	1.6	W
Linear Derating Factor		0.02	/W
Gate-to-Source Voltage	VGS	±20	V
Drain-Source Voltage	VDS	20	V
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 to + 175

Parameters:

Technical/Catalog Information	IRF7460PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	10 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 10V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7460PBF IRF7460PBF