IRF7463PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 9.5 mOhms


Application

·High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
·High Frequency Buck Converters for Computer Processor Power
·Lead-Free


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±12	V
ID@TA=25	Continuous Drain Current, VGS @ 10V	14	A
ID@TA=70	Continuous Drain Current, VGS @ 10V	11	A
IDM	Pulsed Drain Current	110	A
PD@TA=25	Maximum Power Dissipation	2.5	W
PD@TA=70	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	mW/
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7463PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	3150pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	51nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7463PBF IRF7463PBF