IRF7464PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 200 V
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 1.2 A
Resistance Drain-Source RDS (on) : 730 mOhms


Application

· High frequency DC-DC converters
· Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
ID@TA=25	Continuous Drain Current,VGS @ 10V	1.2	A
ID@TA=70	Continuous Drain Current,VGS @ 10V	1.0
IDM	Pulsed Drain Current	10
PD@TA=25	CPower Dissipatio	2.5	W
	Linear Derating Factor	0.02	W/
VGS	Gate-to-Source Voltage	30	V
dv/dt	Peak Diode Recovery dv/dt	6.8	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Parameters:

Technical/Catalog Information	IRF7464PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.2A
Rds On (Max) @ Id, Vgs	730 mOhm @ 720mA, 10V
Input Capacitance (Ciss) @ Vds	280pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7464PBF IRF7464PBF