IRF7466PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 17 mOhms


Application




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	11	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	9.0
IDM	Pulsed Drain Current	90
PD @TA = 25°C	Maximum Power Dissipation	2.5	W
PD @TA = 70°C	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	mW/
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7466PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	12.5 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2100pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	23nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7466PBF IRF7466PBF