IRF7467PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 13.5 mOhms


Application

·High Frequency DC-DC  Isolated Converters  with Synchronous Rectification for Telecom and Industrial use
·High Frequency Buck Converters for Computer Processor Power
·Lead-Free


Pinout




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±12	V
ID @ TA = 25	CContinuous Drain Current,VGS @ 10V	11	A
ID @ TA = 70	CContinuous Drain Current,VGS @ 10V	9.0
IDM	Pulsed Drain Current	90
PD @TA = 25	CMaximum Power Dissipatio	90	W
PD @TA = 70	CMaximum Power Dissipatio	2.5	W
	Linear Derating Factor	0.02	W/
TJ, TSTG	Junction and Storage Temperature Range	-55 TO +150

Parameters:

Technical/Catalog Information	IRF7467PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	12 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2530pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7467PBF IRF7467PBF