Features: ·Low Gate to Drain Charge to Reduce Switching Losses·Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)·Fully Characterized Avalanche Voltage and CurrentApplicationHigh frequency DC-DC convertersPinoutSpecifications Parameter Max. ...
IRF7491: Features: ·Low Gate to Drain Charge to Reduce Switching Losses·Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)·Fully Characterized Avalanche Volta...
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| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | 80 | V |
| VGS | Gate-to-Source Voltage | ± 20 | |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 9.7 | A |
| ID @ TA = 100 | Continuous Drain Current, VGS @ 10V | 6.1 | |
| IDM | Pulsed Drain Current | 77 | |
| PD @TA = 25 | Maximum Power Dissipation | 2.5 | W |
| Linear Derating Factor | 0.02 | W/ | |
| dv/dt | Peak Diode Recovery dv/dt | 4.4 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |