IRF7494PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 5.2 A
Resistance Drain-Source RDS (on) : 44 m Ohms


Features:

· High frequency DC-DC converters
· Lead-Free


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	150	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	5.2	A
ID @ TA = 100°C	Continuous Drain Current, VGS @ 10V	3.7
IDM	Pulsed Drain Current	42
PD @TA = 25°C	Maximum Power Dissipation	3.0	W
	Linear Derating Factor	0.02	W/°C
dv/dt	Peak Diode Recovery dv/dt	3.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C

Parameters:

Technical/Catalog Information	IRF7494PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	5.2A
Rds On (Max) @ Id, Vgs	44 mOhm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds	1750pF @ 25V
Power - Max	3W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7494PBF IRF7494PBF