IRF7506

Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel
·Fast Switching


Pinout




Specifications

	Parameter	Max.	Units
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-1.7	A
ID @ TA = 70	Continuous Drain Current, VGS @ -10V	-1.4
IDM	Pulsed Drain Current	-9.6
PD @ TA = 25	Power Dissipation	1.25	W
	Linear Derating Factor	10	mW/
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

Fifth Generation HEXFETs from International Rectifier of the IRF7506 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package of the IRF7506, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.