IRF7507

Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel
·Fast Switching

Pinout






Specifications

	Parameter	Max.		Units
		N-Channel	P-Channel
VDS	Drain-Source Voltage	20	-20	V A
ID @ TA = 25	Continuous Drain Current, VGS	2.4	-1.7
ID @ TA = 70	Continuous Drain Current, VGS	1.9	-1.4
IDM	Pulsed Drain Current	19	-14
PD @TA = 25	Maximum Power Dissipation	1.25		W
PD @TA = 70	Maximum Power Dissipation	0.8		W
	Linear Derating Factor	10		mW/
VGS	Gate-to-Source Voltage	± 12		V
VGSM	Gate-to-Source Voltage Single Pulse tp<10µS	16		V
dv/dt	Peak Diode Recovery dv/dt	5.0	-5.0	V/ns
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	240 (1.6mm from case)

Description

Fifth Generation HEXFETs from International Rectifier of the IRF7507 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package of the IRF7507, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.