MFG:International Rectifier (VA) Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier (VA)
Descriptions: MOSFET N+P 30V 2A MICRO8
| Technical/Catalog Information | IRF7509TR |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2.7A, 2A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
| Power - Max | 1.25W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Package / Case | Micro8? |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7509TR IRF7509TR IRF7509CT ND IRF7509CTND IRF7509CT |
IRF7509TR
PDF/DataSheet Download
Fifth Generation HEXFETs IRF7509PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow...
Fifth Generation HEXFETs IRF7509 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
The IRF7507TRPBF is one member of the IRF7507 family which is designed as the HEXFET power MOSFET that is available in the standard SOT-23 package to produce a HEXFET power MOSFET with the industry's smallest footprint. This package, dubbed the micro3, is id...
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Fifth Generation HEXFETs from International Rectifier of the IRF7507utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...
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