IRF7524D1

Features:

·Co-packaged HEXFETÒ Power MOSFET and Schottky Diode
·P-Channel HEXFET
·Low VF Schottky Rectifier
·Generation 5 Technology
·Micro8TM Footprint


Pinout




Specifications

	Parameter	Max.	Units
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-1.7	A
ID @ TA = 70		-1.4
IDM	Pulsed Drain Current	-14
PD @TA = 25	Power Dissipation	1.25	W
PD @TA = 70		0.8
	Linear Derating Factor	10	mW/
VGS	Gate-to-Source Voltage	±12	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes IRF7524D1 offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.

The new Micro8TM package IRF7524D1, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.