IRF7606TR

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 1.8W
Current - Continuous Drain (Id) @ 25° C: 3.6A
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Input Capacitance (Ciss) @ Vds: 520pF @ 25V
Manufacturer: International Rectifier
Supplier Device Package: Micro8?
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V


Parameters:

Technical/Catalog Information	IRF7606TR
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds	520pF @ 25V
Power - Max	1.8W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	Micro8?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7606TR IRF7606TR IRF7606DKR ND IRF7606DKRND IRF7606DKR