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Part Number: IRF7706

 

 

 

 

Description: HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l...


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IRF7706 General Description


HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

IRF7706 Maximum Ratings

  Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25 Continuous Drain Current, VGS @ -10V -7.0 A
ID @ TA = 70 Continuous Drain Current, VGS @ -10V -5.7
IDM Pulsed Drain Current -28
PD @ TA = 25 Maximum Power Dissipation 1.51 W
PD @ TA = 70 Maximum Power Dissipation 0.96
  Linear Derating Factor 0.01 W/
VGS Gate-to-Source Voltage ±20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7706 Features

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel

IRF7706 Connection Diagram

IRF7706 Connection Diagram

IRF7706 datasheet

IRF7706
PDF/DataSheet Download

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Related Part Number

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