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MFG:IR  Package Cooled:N/A  D/C:30  

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Part Number: IRF7726

 

MFG: IR

Package Cooled: N/A

D/C: 30

Description: HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...


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IRF7726 General Description


HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7726 Maximum Ratings

  Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25 Continuous Drain Current, VGS @ -10V -7.0 A
ID @ TA = 70 Continuous Drain Current, VGS @ -10V -5.7
IDM Pulsed Drain Current -28
PD @TA = 25 Maximum Power Dissipation 1.79 W
PD @TA = 70 Maximum Power Dissipation 1.14 W
  Linear Derating Factor 0.01 W/
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7726 Features

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel

IRF7726 datasheet

IRF7726
PDF/DataSheet Download

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