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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | 12 V | Continuous Drain Current : | 6.6 A | ||
| Resistance Drain-Source RDS (on) : | 25 mOhms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |
| Technical/Catalog Information | IRF7807APBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8.3A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7807APBF IRF7807APBF |