IRF7807D1 Selling Leads, Price trend , International Rectifier, IRF7807D1 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 004376830 Detail

IRF7807D1: MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807D1 Data Sheet

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Part Number:: IRF7807D1
Mfg:: International Rectifier
Supply Ability:: 5000

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1~5000

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Product Details

Description

Features:

• Co-Pack N-channel HEXFETÒ Power MOSFET and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Max.	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±12
Continuous Drain or Source Current (V_GS 4.5V)	25	I_D	8.3	A
	70		6.6
Pulsed Drain Current		I_DM	66
Power Dissipation	25	P_D	2.5	W
	70		1.6
Schottky and Body Diode Average ForwardCurrent	25	I_F (AV)	3.5	A
	70		2.2
Junction & Storage Temperature Range		T_J, T_STG	55 to 150

Description

The FETKY™ family of Co-Pack HEXFETÒMOSFETs and Schottky diodes IRF7807D1 offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7807D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7807D1
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8.3A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7807D1 IRF7807D1

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