IRF7807D1PBF

MOSFET

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SeekIC No. : 00155895 Detail

IRF7807D1PBF: MOSFET

floor Price/Ceiling Price

US $ .21~.21 / Piece | Get Latest Price
Part Number:
IRF7807D1PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2700
  • 2700~4000
  • Unit Price
  • $.21
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : 8.3 A
Resistance Drain-Source RDS (on) : 25 mOhms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 25 mOhms
Continuous Drain Current : 8.3 A


Parameters:

Technical/Catalog InformationIRF7807D1PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.3A
Rds On (Max) @ Id, Vgs25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7807D1PBF
IRF7807D1PBF



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