IRF7807VD2

MOSFET N-CH 30V 8.3A 8-SOIC

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SeekIC No. : 003432890 Detail

IRF7807VD2: MOSFET N-CH 30V 8.3A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7807VD2
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Series: FETKY™ Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Diode (Isolated) Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Packaging: Tube
Supplier Device Package: 8-SO
Current - Continuous Drain (Id) @ 25° C: 8.3A
Manufacturer: International Rectifier
Series: FETKY™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V


Features:

• Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier





Pinout

  Connection Diagram




Specifications

Parameter Symbol Max. Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain or Source
Current (VGS 4.5V)
25 ID 8.3 A
70 6.6
Pulsed Drain Current IDM 66
Power Dissipation 25 PD 2.5 W
70 1.6
Schottky and Body Diode
Average ForwardCurrent
25 IF (AV) 3.7
A
70 2.3
Junction & Storage Temperature Range TJ, TSTG 55 to 150





Description

The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes IRF7807VD2 offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7807VD2 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques.






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