IRF7807VD2PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 25 mOhms
Continuous Drain Current : 8.3 A


Features:

• Co-Pack N-channel HEXFET^® Power MOSFET and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free


Pinout




Specifications

Parameter	Symbol	Max.	Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS 4.5V) 70°C Pulsed Drain Current Power Dissipation 25°C                                70°C Schottky and Body Diode 25°C Average ForwardCurrent 70°C Junction & Storage Temperature Range	VDS VGS ID IDM PD IF (AV) TJ,TSTG	30 ±20 8.3 6.6 66 2.5 1.6 3.7 2.3 55 to 150	A A °C V W

Description

The FETKY™ family of Co-Pack HEXFET^®MOSFETs and Schottky diodes IRF7807VD2PbF offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7807VD2PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7807VD2PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8.3A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7807VD2PBF IRF7807VD2PBF