IRF7807Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Input Capacitance (Ciss) @ Vds: 770pF @ 15V


Pinout






Description

The IRF7807Z is real-time clocks for microcomputers that can be connected directly to data buses of 16 bit CPUs. The features of IRF7807Zare: (1)very low RDS(on) at 4.5V VGS; (2)ultra-low gate impedance; (3)fully characterized avalanche voltage and current.

The following is about the absolute maximum ratings of IRF7807Z: (1)drain-source voltage: 30V; (2)continuous drain current, VGS @ 10V: 11A; (3)continuous drain current, VGS @ 10V: 8.7A; (4)pulsed drain current: 88A; (5)power dissipation: 2.5W; (6)linear derating factor: 0.02W/; (7)storage junction temperature range: -55 to +150.

The electrical characteristics of the IRF7807Z are: (1)drain-source breakdown voltage: 30V min at VGS=0V; (2)gate thresholad voltage: 1.35V min, 1.8V typ and 2.25V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=20V; (4)gate-source leakage reverse: -100nA max at VGS=-20V; (5)total gate charge: 7.2nC min and 20nC max at ID=11A; (6)turn-on delay time: 6.9ns typ; (7)turn-off delay time: 10ns typ.

The IRF7807Z is designed as one kind of HEXFET Power MOSFET device that can be used in (1)control FET for notebook processor power; (2)synchronous rectifier MOSFET for graphics cards and POL converters in networking and telecommunication systems applications. And the benefits of this device are:(1)very low RDS(on) at 4.5V VGS; (2)ultra-low gate impedance; (3)fully characterized avalanche voltage and current.

The absolute maximum ratings of the IRF7807Z can be summarized as:(1)Drain-to-Source Voltage: 30 V;(2)Gate-to-Source Voltage: ±20 V;(3)Continuous Drain Current, VGS @ 10V: 11 A;(4)Pulsed Drain Current: 88 A;(5)Power Dissipation: 2.5 W;(6)Linear Derating Factor: 0.02 W/°C;(7)Operating Junction and Storage Temperature Range: -55 °C to +150 °C.

The electrical characteristics of the IRF7807Z can be summarized as:(1)Drain-to-Source Breakdown Voltage: 30 V;(2)Breakdown Voltage Temp. Coefficient: 0.023 V/°C;(3)Static Drain-to-Source On-Resistance: 11 to 13.8 m;(4)Gate Threshold Voltage: 1.35 to 2.25 V;(5)Gate Threshold Voltage Coefficient: 4.7 mV/°C;(6)Gate-to-Source Forward Leakage: 100 nA;(7)Gate-to-Source Reverse Leakage: -100 nA;(8)Forward Transconductance: 22 S;(9)Total Gate Charge: 7.2 to 11 nC.etc. If you want to know more information such as the electrical characteristics about the IRF7807Z, please download the datasheet in www.seekic.com or www.chinaicmart.com.