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IRF7811APBF

MOSFET N-CH 28V 11A 8-SOIC

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SeekIC No. : 003432140 Detail

IRF7811APBF: MOSFET N-CH 28V 11A 8-SOIC

IRF7811APBF Data Sheet

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Part Number:
IRF7811APBF
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 28V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1760pF @ 15V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Drain to Source Voltage (Vdss): 28V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 1760pF @ 15V
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V


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