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IRF7811W

Features: • N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Low Conduction Losses• Low Switching LossesPinoutSpecifications Parameter Symbol IRF7807 V Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 Continuo...

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SeekIC No. : 004376839 Detail

IRF7811W: Features: • N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Low Conduction Losses• Low Switching LossesPinoutSpecifications Parameter Symbo...

IRF7811W Data Sheet

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Part Number:
IRF7811W
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses


Pinout

Connection Diagram


Specifications

Parameter Symbol IRF7807 V Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain or Source
Current (VGS 4.5V)		 TA = 25 ID 14 A
TL = 90 13
Pulsed Drain Current IDM 109
Power Dissipation TA = 25 PD 3.1 W
TL = 90 3.0
Junction & Storage Temperature Range TJ, TSTG
55 to 150
Continuous Source Current (Body Diode) IS 3.9 A
Pulsed source Current ISM 109



Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity.The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications.

The package of the IRF7811W is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.




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