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IRF7811WTR

MOSFET N-CH 30V 14A 8-SOIC

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SeekIC No. : 003433447 Detail

IRF7811WTR: MOSFET N-CH 30V 14A 8-SOIC

IRF7811WTR Data Sheet

floor Price/Ceiling Price

US $ .62~.62 / Piece | Get Latest Price
Part Number:
IRF7811WTR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~4000
  • Unit Price
  • $.62
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 14A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2335pF @ 16V
Power - Max: 3.1W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Power - Max: 3.1W
Current - Continuous Drain (Id) @ 25° C: 14A
Gate Charge (Qg) @ Vgs: 33nC @ 5V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
Input Capacitance (Ciss) @ Vds: 2335pF @ 16V


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