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MFG:IR  Package Cooled:SOP/8  D/C:04+  

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Part Number: IRF7901D1

 

MFG: IR

Package Cooled: SOP/8

D/C: 04+

Description: The FETKY™ family of Co-Pack HEXFETÒMOSFETs and Schottky diodes offers the designer an innovative, boar...


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IRF7901D1 General Description


The FETKY™ family of Co-Pack HEXFETÒMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFETÒMOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance.

IRF7901D1 Maximum Ratings

Parameter Symbol IRF7807 V Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain or Source
Current (VGS 4.5V)		 TL = 100 ID 6.2 A
Pulsed Drain Current IDM 24
Power Dissipation TL = 100 PD
TJ, TSTG		 2.0 W

Junction & Storage Temperature Range
55 to 150
Pulsed source Current ISM 12 A

IRF7901D1 Features

• Co-Pack Dual N-channel HEXFETÒ Power MOSFET and Schottky Diode
• Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier

IRF7901D1 Connection Diagram

IRF7901D1 Connection Diagram

IRF7901D1 datasheet

IRF7901D1
PDF/DataSheet Download

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