IRF7901D1

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 6.2A
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Packaging: Tube
Series: FETKY™
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Gate Charge (Qg) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) @ Vds: 780pF @ 16V


Features:

• Co-Pack Dual N-channel HEXFETÒ Power MOSFET and Schottky Diode
• Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier


Pinout




Specifications

Parameter		Symbol	IRF7807 V	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±20
Continuous Drain or Source Current (VGS 4.5V)	TL = 100	ID	6.2	A
Pulsed Drain Current		IDM	24
Power Dissipation	TL = 100	PD TJ, TSTG	2.0	W
Junction & Storage Temperature Range			55 to 150
Pulsed source Current		ISM	12	A

Description

The FETKY™ family of Co-Pack HEXFETÒMOSFETs and Schottky diodes IRF7901D1 offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFETÒMOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications.

The SO-8 IRF7901D1 has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance.