IRF7MS2907

Features: · Low R DS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45* A ID @ VGS = 10V, TC = 1...

product image

IRF7MS2907 Picture
SeekIC No. : 004376861 Detail

IRF7MS2907: Features: · Low R DS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Un...

floor Price/Ceiling Price

Part Number:
IRF7MS2907
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/19

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low  R DS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight



Specifications

 
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
45*
A
ID @ VGS = 10V, TC = 100°C
Continuous Drain Current
45*
IDM
Pulsed Drain Current
180
PD @ TC = 25°C
Max. Power Dissipation
208
W
Linear Derating Factor
1.67
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
760
mJ
IAR
Avalanche Current
45
A
EAR
Repetitive Avalanche Energy
20.8
mA
dv/dt
Peak Diode Recovery dv/dt
2.2
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063in./1.6mm from case for 10s)
Weight
4.3 (Typical)
g



Description

Seventh Generation HEXFET® power MOSFETs IRF7MS2907 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices IRF7MS2907 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Cables, Wires
Crystals and Oscillators
Hardware, Fasteners, Accessories
Batteries, Chargers, Holders
Audio Products
View more