Features: · Low R DS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45* A ID @ VGS = 10V, TC = 1...
IRF7MS2907: Features: · Low R DS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Un...
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Parameter |
Units | ||
ID @ VGS = 10V, TC = 25°C |
Continuous Drain Current |
45* |
A |
ID @ VGS = 10V, TC = 100°C |
Continuous Drain Current |
45* | |
IDM |
Pulsed Drain Current |
180 | |
PD @ TC = 25°C |
Max. Power Dissipation |
208 |
W |
Linear Derating Factor |
1.67 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
760 |
mJ |
IAR |
Avalanche Current |
45 |
A |
EAR |
Repetitive Avalanche Energy |
20.8 |
mA |
dv/dt |
Peak Diode Recovery dv/dt |
2.2 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 (0.063in./1.6mm from case for 10s) | ||
Weight |
4.3 (Typical) |
g |
Seventh Generation HEXFET® power MOSFETs IRF7MS2907 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices IRF7MS2907 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.