IRF8113

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 36nC @ 4.5V
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 17.2A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V
Input Capacitance (Ciss) @ Vds: 2910pF @ 15V


Description

The features of IRF8113 are: (1)very low RDS(ON) at 4.5V VGS; (2)low gate charge; (3)fully characterized avalanche voltage and current.

The following is about the absolute maximum ratings of IRF8113: (1)drain-source voltage: 30V; (2)gate-source voltage: ±20V; (3)continuous drain current, VGS @ 10V: 17.2A; (4)continuous drain current, VGS @ 10V: 13.8A; (5)drain current-pulse: 135A; (6)power dissipation: 2.5W; (8)linear derating factor: 0.02W/; (9)operating junction and storage temperature range: -55 to +150.

The electrical characteristics of the IRF8113 are: (1)drain-source breakdown voltage: 30V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.024V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 4.7m typ and 5.6m max at VGS=10V, ID=17.2A; (4)gate thresholad voltage: 1.5V min and 2.2V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=20V; (6)gate-source reverse leakage: -100nA max at VGS=-20V; (7)drain-source leakage current: 1.0A min at VDS=24V, VGS=0.