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IRF820A

MOSFET N-Chan 500V 2.5 Amp

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SeekIC No. : 00158779 Detail

IRF820A: MOSFET N-Chan 500V 2.5 Amp

IRF820A Data Sheet

floor Price/Ceiling Price

US $ 1.02~1.1 / Piece | Get Latest Price
Part Number:
IRF820A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~730
  • 730~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.1
  • $1.06
  • $1.03
  • $1.02
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

·Low Gate Charge Qg results in Simple Drive Requirement
·Improved Gate, Avalanche and dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective COSS specified (See AN 1001)


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High speed power switching


Specifications

  Parameter Max. Units
ID @ TC = 2 Continuous Drain Current, VGS @ 10V 2.5 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 1.6
IDM Pulsed Drain Current 10
PD @TC = 25 Power Dissipation 50 W
  Linear Derating Factor 0.4
 W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 3.4 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)



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