IRF820AL

MOSFET N-Chan 500V 2.5 Amp

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IRF820AL Picture
SeekIC No. : 00164795 Detail

IRF820AL: MOSFET N-Chan 500V 2.5 Amp

floor Price/Ceiling Price

Part Number:
IRF820AL
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 2.5 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

·Low Gate Charge Qg Results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective COSS specified (See AN 1001)



Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High speed power switching



Specifications

  Parameter Max. Units
ID @ TC = 2 Continuous Drain Current, VGS @ 10V 2.5 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 1.6
IDM Pulsed Drain Current 10
PD @TC = 25 Power Dissipation 50 W
  Linear Derating Factor 0.4
W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 3.4 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)



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