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Package Cooled:TO-251  D/C:09+  

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Part Number: IRF820B

 

 

Package Cooled: TO-251

D/C: 09+

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMO...


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IRF820B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

IRF820B Maximum Ratings

Symbol Parameter IRF820B IRF820B Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 2.5 2.5* A
1.6 1.6* A
IDM Drain Current - Pulsed (Note 1) 8.0 8.0* A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ
IAR Avalanche Current (Note 1) 2.5 A
EAR Repetitive Avalanche Energy (Note 1) 4.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25		 49 33
 W
0.39 0.27 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds		 300

IRF820B Features

• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

IRF820B datasheet

IRF820B
PDF/DataSheet Download

  • Datasheet: IRF820B
  • File Size: 879029 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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