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Part Number: IRF830

 

 

 

 

Description: The Bay Linear MOSFET's provide the designers with the best combination of fast switching, ruggedized device design, lo...


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IRF830 General Description


The Bay Linear MOSFET's provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts

IRF830 Maximum Ratings

  Parameter Max. Units
ID @ TC = 2 Continuous Drain Current, VGS @ 10V 2.5 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 1.6
IDM Pulsed Drain Current (1) 10
PD @TC = 25 Power Dissipation 50 W
  Linear Derating Factor 0.4
 W/
  Linear Derating Factor ( PCB Mount, D2 ) (1) 0.025
VGS Gate-to-Source Voltage ± 30 V
EAS Single Pulse Avalanche Energy (2) 280 mJ
IAR Avalanche Current (1) 4.5 A
EAR Repetitive Avalanche Energy (1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (3) 3.4 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF830 Features

·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·Fast Switching
·Ease of Paralleling
·Simple Drive Requirements

IRF830 datasheet

IRF830
PDF/DataSheet Download

  • Datasheet: IRF830
  • File Size: 41409 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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