MOSFET N-Chan 500V 4.5 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.5 A | ||
| Resistance Drain-Source RDS (on) : | 1.5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter | Max. | Units | |
| ID @ TC = 2 | Continuous Drain Current, VGS @ 10V | 2.5 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 1.6 | |
| IDM | Pulsed Drain Current (1) | 10 | |
| PD @TC = 25 | Power Dissipation | 50 | W |
| Linear Derating Factor | 0.4 |
W/ | |
| Linear Derating Factor ( PCB Mount, D2 ) (1) | 0.025 | ||
| VGS | Gate-to-Source Voltage | ± 30 | V |
| EAS | Single Pulse Avalanche Energy (2) | 280 | mJ |
| IAR | Avalanche Current (1) | 4.5 | A |
| EAR | Repetitive Avalanche Energy (1) | 7.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (3) | 3.4 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRF830 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 610pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF830 IRF830 497 2732 5 ND 49727325ND 497-2732-5 |