IRF830

MOSFET N-Chan 500V 4.5 Amp

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IRF830 Picture
SeekIC No. : 00151327 Detail

IRF830: MOSFET N-Chan 500V 4.5 Amp

floor Price/Ceiling Price

US $ 1.27~1.93 / Piece | Get Latest Price
Part Number:
IRF830
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.93
  • $1.55
  • $1.41
  • $1.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 4.5 A


Features:

·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·Fast Switching
·Ease of Paralleling
·Simple Drive Requirements





Specifications

Parameter Max. Units
ID @ TC = 2 Continuous Drain Current, VGS @ 10V 2.5 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 1.6
IDM Pulsed Drain Current (1) 10
PD @TC = 25 Power Dissipation 50 W
Linear Derating Factor 0.4
W/
Linear Derating Factor ( PCB Mount, D2 ) (1) 0.025
VGS Gate-to-Source Voltage ± 30 V
EAS Single Pulse Avalanche Energy (2) 280 mJ
IAR Avalanche Current (1) 4.5 A
EAR Repetitive Avalanche Energy (1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (3) 3.4 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case )





Description

The Bay Linear MOSFET's of the IRF830 provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.

The IRF830 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts





Parameters:

Technical/Catalog InformationIRF830
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds 610pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF830
IRF830
497 2732 5 ND
49727325ND
497-2732-5



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