MOSFET N-Chan 500V 5.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5 A | ||
Resistance Drain-Source RDS (on) : | 1.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 5.0 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 3.2 | |
IDM | Pulsed Drain Current | 20 | |
PD @TC = 25°C | Power Dissipation | 74 | W |
Linear Derating Factor | 0.59 | W/°C | |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 5.3 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf?in (1.1N?m) |