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IRF830APBF

MOSFET N-Chan 500V 5.0 Amp

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SeekIC No. : 00147877 Detail

IRF830APBF: MOSFET N-Chan 500V 5.0 Amp

IRF830APBF Data Sheet

floor Price/Ceiling Price

US $ .46~.76 / Piece | Get Latest Price
Part Number:
IRF830APBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.76
  • $.6
  • $.52
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 5 A


Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High speed power switching
· Lead-Free


Specifications

 
Parameter
Unit
ID @ VGS = 10V,TC = 25 Continuous Drain Current
5.0
A
ID @ VGS = 10V,TC = 100 Continuous Drain Current
3.2
A
IDM Pulsed Drain Current
20
A
PD @ TC = 25 Max. Power Dissipation
74
W
  Linear Derating Factor
2.59
W/
VGS Gate-to-Source Voltage
±30
V
dv/dt Peak Diode Recovery dv/dt
5.3
V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range
-55 to 150
  Pckg. Mounting Surface Temp.
300 (1.6mm from case )
  Weight
10 lbf`in (1.1N`m)
g



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