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IRF830LPBF

MOSFET N-Chan 500V 4.5 Amp

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SeekIC No. : 00163221 Detail

IRF830LPBF: MOSFET N-Chan 500V 4.5 Amp

IRF830LPBF Data Sheet

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Part Number:
IRF830LPBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High Speed Power Switching
·Lead-Free


Specifications

Parameter
Maximum
Units
ID @ TC=25
 Continuous Drain Current,VGS @-10V
5.0
A
ID @ TC=100
 Continuous Drain Current,VGS @-10V
3.2
IDM
 Pulsed Drain Current
20
PD@ TA= 25
 Power Dissipation
3.1
W
PD@ TC= 70
74
 Linear Derating Factor
0.59
W/
VGS
 Gate-to-Source Voltage
±30
V
dv/dt
 Peak Diode Recovery dv/dt
5.3
V/nS
TJ
 Operating Junction and
-55 to 150
TSTG
 Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)



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