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IRF840APBF

MOSFET N-Chan 500V 8.0 Amp

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SeekIC No. : 00149616 Detail

IRF840APBF: MOSFET N-Chan 500V 8.0 Amp

IRF840APBF Data Sheet

floor Price/Ceiling Price

US $ .57~.93 / Piece | Get Latest Price
Part Number:
IRF840APBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.93
  • $.74
  • $.65
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 850 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 850 mOhms
Continuous Drain Current : 8 A


Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High speed power switching
· Lead-Free


Specifications

Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ -10V,Tc = 25 ID 8.0 A
Continuous Drain Current, VGS @ -10V,Tc = 100 ID 5.1 A
Pulsed Drain Current*1 IDM 32 A
Power Dissipation Tc = 25 PD 125 W
Linear Derating Factor   1.0 /W
Gate-to-Source Voltage VGS ±30 V
Peak Diode Recovery dv/dt *2 dv/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf.in (1.1N.m)  



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