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IRF840I

Features: Ease of Paralleling Fast Switching Characteristic Simple Drive RequirementSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-to-Source Voltage ±20 V ID @ TC = 25 Continuous Drain Current, VGS @ 10V 8 A ID @TC...

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SeekIC No. : 004376876 Detail

IRF840I: Features: Ease of Paralleling Fast Switching Characteristic Simple Drive RequirementSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-to...

IRF840I Data Sheet

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Part Number:
IRF840I
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Description



Features:

Ease of Paralleling
Fast Switching Characteristic
Simple Drive Requirement


Specifications

Symbol Parameter
Rating
Units
VDS Drain-Source Voltage
500
V
VGS Gate-to-Source Voltage
±20
V
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
8
A
ID @TC= 100 Continuous Drain Current, VGS @ 10V
5.1
A
IDM Pulsed Drain Current1
32
A
PD @TC = 25 Power Dissipation
35
W
EAS Single Pulse Avalanche Energy2
320
mJ
IAR Avalanche Current
8
A
TSTG Storage Temperature Range
-55 to 150
A
TJ Operating Junction Temperature Range
-55 to 150
A



Description

APEC MOSFET IRF840I provide the power designer with the best combination of fast switching , lower on-resistance and reasonable
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.




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