Features: Ease of Paralleling Fast Switching Characteristic Simple Drive RequirementSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-to-Source Voltage ±20 V ID @ TC = 25 Continuous Drain Current, VGS @ 10V 8 A ID @TC...
IRF840I: Features: Ease of Paralleling Fast Switching Characteristic Simple Drive RequirementSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-to...
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Symbol | Parameter |
Rating |
Units |
VDS | Drain-Source Voltage |
500 |
V |
VGS | Gate-to-Source Voltage |
±20 |
V |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
8 |
A |
ID @TC= 100 | Continuous Drain Current, VGS @ 10V |
5.1 |
A |
IDM | Pulsed Drain Current1 |
32 |
A |
PD @TC = 25 | Power Dissipation |
35 |
W |
EAS | Single Pulse Avalanche Energy2 |
320 |
mJ |
IAR | Avalanche Current |
8 |
A |
TSTG | Storage Temperature Range |
-55 to 150 |
A |
TJ | Operating Junction Temperature Range |
-55 to 150 |
A |
APEC MOSFET IRF840I provide the power designer with the best combination of fast switching , lower on-resistance and reasonable
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.