IRF840LCL

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.85 Ohms


Features:

·Ultra Low Gate Charge
·Reduced Gate Drive Requirement
·Enhanced 30V VGS Rating
·Reduced CISS, COSS, CRSS
·Extremely High Frequency Operation
·Repetitive Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	8.0	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	5.1
IDM	Pulsed Drain Current	28
PD @ TA = 25	Power Dissipation	3.1	W
PD @ TC = 25	Power Dissipation	125	W
	Linear Derating Factor	1.0	W/
VGS	Gate-to-Source Voltage	± 30	V
EAS	Single Pulse Avalanche Energy	510	mJ
IAR	Avalanche Curren t	8.0	A
EAR	Repetitive Avalanche Energy	13	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

This new series of low charge HEXFET® IRF840LCL power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.

These device IRF840LCL improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs offer the designer a new power transistor standard for switching applications.