IRF840NPBF

The IRF840NPBF is designed as one kind of HEXFET power MOSFET that can be used in (1)switch mode power supply ( SMPS ); (2)uninterruptable power supply; (3)high speed power switching. And the benefits of this device are:(1)low gate charge Qg results in simple drive requirement; (2)improved gate, avalanche and dynamic dv/dt ruggedness; (3)fully characterized capacitance and avalanche voltage and current; (4)effective coss specified.

The absolute maximum ratings of the IRF840NPBF can be summarized as:(1)Continuous Drain Current, VGS @ 10V TC = 25°C: 8.0 A;(2)Continuous Drain Current, VGS @ 10V TC = 100°C: 5.1 A;(3)Pulsed Drain Current: 32 A;(4)Power Dissipation: 125 W;(5)Linear Derating Factor: 1.0 W/°C;(6)Gate-to-Source Voltage: ±30 V;(7)Peak Diode Recovery dv/dt: 5.0 V/ns;(8)Operating Junction and Storage Temperature Range: -55 to + 150 °C;(9)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) °C;(10)Mounting torqe, 6-32 or M3 screw: 10 lbf•in (1.1N•m).

The electrical characteristics of the IRF840NPBF can be summarized as:(1)Drain-to-Source Breakdown Voltage: 500 V;(2)Breakdown Voltage Temp. Coefficient: 0.58 V/°C;(3)Static Drain-to-Source On-Resistance: 0.85 ;(4)Gate Threshold Voltage: 2.0 to 4.0 V;(5)Gate-to-Source Forward Leakage: 100 nA;(6)Gate-to-Source Reverse Leakage: -100 nA. If you want to know more information such as the electrical characteristics about the IRF840NPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .