IRF8707PBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 17.5 mOhms


Application

·Control MOSFET of Sync-Buck
· Converters used for Notebook
· Processor Power
·Control MOSFET for Isolated
· DC-DC Converters in Networking
· Systems


Pinout




Specifications

	Parameter	Max.	Unit
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	11	A
ID @ TA= 70	Continuous Drain Current, VGS @ 10V	9.1	A
IDM	Pulsed Drain Current	88	A
PD @TA = 25	Power Dissipation	2.5	W
PD @TA = 70	Power Dissipation	1.6	W/
	Linear Derating Factor	2.5	V
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20	mJ
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Description

The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.

Parameters:

Technical/Catalog Information	IRF8707PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	11.9 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	760pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	9.3nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF8707PBF IRF8707PBF