MOSFET 2N-CH 20V 10A 8-SOIC
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Parameter | Max. | Units | |
VDS | Drain- Source Voltage | 20 | V |
VGS | Gate-to-Source Voltage | ± 20 | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 10 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 8.3 | |
IDM | Pulsed Drain Current | 82 | |
PD @TA = 25 | Power Dissipation | 2.0 | W |
PD @TA = 70 | Power Dissipation | 1.3 | |
Linear Derating Factor | 0.016 | W/ | |
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
Technical/Catalog Information | IRF8910 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 960pF @ 10V |
Power - Max | 2W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF8910 IRF8910 |