IRF8915

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 8.9A
Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 540pF @ 10V
Packaging: Tube


Application

·Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	8.9	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	7.1
IDM	Pulsed Drain Current	71
PD @TA = 25°C	Power Dissipation	2.0	W
PD @TA = 70°C	Power Dissipation	1.3
	Linear Derating Factor	0.016	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C