IRF8915TR Selling Leads, Price trend, IRF8915TR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003429795 Detail

IRF8915TR: MOSFET 2N-CH 20V 8.9A 8-SOIC

IRF8915TR Data Sheet

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Part Number:: IRF8915TR
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Supply Ability:: 5000

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Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	2 N-Channel (Dual)	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V	Drain Source Voltage VDS :	+ / - 20 V
Current - Continuous Drain (Id) @ 25° C:	8.9A	Rds On (Max) @ Id, Vgs:	18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA	Gate Charge (Qg) @ Vgs:	7.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds:	540pF @ 10V	Power - Max:	2W
Mounting Type:	Surface Mount	Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 8.9A
Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 540pF @ 10V

Parameters:

Technical/Catalog Information	IRF8915TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8.9A
Rds On (Max) @ Id, Vgs	18.3 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds	540pF @ 10V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.4nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF8915TR IRF8915TR

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IRF8915TR

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