IRF9530L, US $ 1.02-1.02, IRF9530L DataSheet download, circuit diagram from SeekIC.com

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IRF9530L: MOSFET P-CH 100V 12A TO-262

IRF9530L Data Sheet

US $ 1.02~1.02 / Piece | Get Latest Price

Part Number:: IRF9530L
Mfg:
Supply Ability:: 5000

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Product Details

Quick Details

Series:	-	Manufacturer:	Vishay Siliconix
FET Type:	MOSFET P-Channel, Metal Oxide	Gain :	19.5 dB
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	100V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	12A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	300 mOhm @ 7.2A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	38nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	860pF @ 25V
Power - Max:	3.7W	Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package:	I2PAK

Description

Series: -
Manufacturer: Vishay Siliconix
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 3.7W
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds: 860pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK

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IRF9530L

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