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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 2.3 A | ||
| Resistance Drain-Source RDS (on) : | 0.25 Ohms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |
| Technical/Catalog Information | IRF9953PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF9953PBF IRF9953PBF |